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FDS89161 - Dual N-Channel MOSFET

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FDS89161 Product details

Description

Shielded Gate MOSFET Technology Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate t

Features

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