FDS89161 Datasheet - Fairchild Semiconductor

Dual N-Channel MOSFET

FDS89161 General Description

* Shielded Gate MOSFET Technology * Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A * Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A * High performance trench technology for extremely low rDS(on) * High power and current handling capability in a widely used sur.

FDS89161 Datasheet (302.58 KB)

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FDS89161

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Fairchild Semiconductor

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302.58 KB

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Dual n-channel mosfet.
FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 105.

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FDS89161 Dual N-Channel MOSFET Fairchild Semiconductor

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FDS89161 General Description

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