Datasheet Details
| Part number | FDS89161 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 302.58 KB |
| Description | Dual N-Channel MOSFET |
| Download | FDS89161 Download (PDF) |
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Overview: FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.
| Part number | FDS89161 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 302.58 KB |
| Description | Dual N-Channel MOSFET |
| Download | FDS89161 Download (PDF) |
|
|
|
Shielded Gate MOSFET Technology Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for rDS(on), switching performance and ruggedness.
Applications Synchronous Rectifier Primary Switch For Bridge Topology D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 SO-8 D2 5 D2 6 Q2 D1 7 Q1 D1 8 4 G2 3 S2 2 G1 1 S1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note1a) Ratings 100 ±20 2.7 15 13 31 1.6 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) 40 (Note 1a) 78 °C/W Device Marking FDS89161 Device FDS89161 Package SO-8 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units ©2011 Fairchild Semiconductor Corporation 1 FDS89161 Rev.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDS89161 | N-Channel Enhancement MOSFET | Kexin |
| Part Number | Description |
|---|---|
| FDS89161LZ | Dual N-Channel MOSFET |
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| FDS8926A | Dual N-Channel MOSFET |
| FDS8928A | Dual-Channel MOSFET |
| FDS8934A | Dual P-Channel MOSFET |
| FDS8935 | MOSFET |
| FDS8936A | Dual N-Channel MOSFET |
| FDS8936S | Dual N-Channel MOSFET |
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