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FDS89161 Key Features

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A
  • Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used
  • 100% UIL Tested
  • RoHS pliant

Other FDS89161 Datasheets

Manufacturer Part Number Description
Kexin Logo Kexin Semiconductor FDS89161 N-Channel Enhancement MOSFET

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FDS89161 Description

„ Shielded Gate MOSFET Technology „ Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A „ Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that...