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FDS89161 - N-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) = 100V.
  • ID = 2.7 A.
  • RDS(ON) ＜ 105mΩ (VGS = 10V).
  • RDS(ON) ＜ 160mΩ (VGS = 4.5V).
  • High performance trench technology for extremely low rDS(on).
  • CDM ESD Protection Level > 2KV typical +0.04 0.21 -0.02 SOP-8 D2 5 D2 6 Q2 D1 7 D1 8atings Q1 Ta = 25 4 G2 3 S2 2 G1 1 S1 1.50 0.15.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Pulsed Single Pulse Avalanche Energy (.

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SMD Type N-Channel Enhancement MOSFET FDS89161 (KDS89161) MOSFET ■ Features ● VDS (V) = 100V ● ID = 2.7 A ● RDS(ON) ＜ 105mΩ (VGS = 10V) ● RDS(ON) ＜ 160mΩ (VGS = 4.5V) ● High performance trench technology for extremely low rDS(on) ● CDM ESD Protection Level > 2KV typical +0.04 0.21 -0.02 SOP-8 D2 5 D2 6 Q2 D1 7 D1 8atings Q1 Ta = 25 4 G2 3 S2 2 G1 1 S1 1.50 0.15 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Pulsed Single Pulse Avalanche Energy (Note1) Power Dissipation Tc=25℃ Ta=25℃ Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID EAS PD RthJA RthJC TJ Tstg Note 1.Starting TJ = 25 °C, L = 0.