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FDS89161 - Dual N-Channel MOSFET

General Description

Shielded Gate MOSFET Technology Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used sur

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FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A „ Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.