FDS89161 Description
Shielded Gate MOSFET Technology Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that...
FDS89161 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A
- Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used
- 100% UIL Tested
- RoHS pliant