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FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET
September 2015
FDS89161LZ
Dual N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 2.7 A, 105 mΩ
Features
General Description
Shielded Gate MOSFET Technology Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on)
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resisitance and yet maintain superior switching performance. G-S zener has been added to
enhance ESD voltage level.
FDS89161LZ Datasheet
