FDS89161LZ Description
Shielded Gate MOSFET Technology Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resisitance and yet...
FDS89161LZ Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A
- Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- CDM ESD protection level > 2KV typical (Note 4)
- DC-DC conversion
- 100% UIL Tested
- RoHS pliant
- Pulsed