Datasheet Details
| Part number | FDS89161LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 301.49 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet | FDS89161LZ_FairchildSemiconductor.pdf |
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Overview: FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.
| Part number | FDS89161LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 301.49 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet | FDS89161LZ_FairchildSemiconductor.pdf |
|
|
|
Shielded Gate MOSFET Technology Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resisitance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
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