FDS89161LZ Datasheet | Fairchild Semiconductor

FDS89161LZ Dual N-Channel Shielded Gate Power Trench® MOSFET September 2015 Dual N-Channel Shielded Gate Power Trench® MOSFET 100 V, 2.7 A, 105 mΩ Features General Description - Shielded Gate MOSFET Technology - Max r DS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A - Max r DS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A - High performance trench technology for extremely low r DS(on) This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resisitance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. - High power and current handling capability in a widely used surface mount package - CDM ESD protection level > 2KV typical (Note 4) Application - DC-DC conversion - 100% UIL Tested - Ro HS pliant D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 SO-8 D2 5 D2 6 Q2 D1 7 D1 8 Q1 4 G2 3 S2 2 G1 1 S1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS...