FDS89161LZ
Overview
Shielded Gate MOSFET Technology Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resisitance and yet maintain superior switching performance.
