FDS89161LZ Datasheet - Fairchild Semiconductor

Dual N-Channel MOSFET

FDS89161LZ General Description

* Shielded Gate MOSFET Technology * Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A * Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A * High performance trench technology for extremely low rDS(on) This N-Channel logic Level MOSFETs are produced using Fairchild Semico.

FDS89161LZ Datasheet (301.49 KB)

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FDS89161LZ

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Fairchild Semiconductor

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Dual n-channel mosfet.
FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A,.

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FDS89161LZ Dual N-Channel MOSFET Fairchild Semiconductor

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FDS89161LZ General Description

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