Datasheet Details
| Part number | FDS89161LZ |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 301.49 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet |
 FDS89161LZ_FairchildSemiconductor.pdf
|
| Part number | FDS89161LZ |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 301.49 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet |
FDS89161LZ_FairchildSemiconductor.pdf
|
Shielded Gate MOSFET Technology Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.This process has been optimized for the on-state resisitance and yet maintain superior switching performance.G-S ze
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