FDS8935 mosfet equivalent, mosfet.
General Description
* Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
* Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A
* High performance trench technol.
* Load Switch
* Synchronous Rectifier
D2 D1 D1
D2
Pin 1
G2 S2 G1 S1
D2 55 D2 66 D1 77 D1 88
Q2 Q1
44 G2 3.
* Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
* Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A
* High performance trench technology for extremely low rDS(on)
* This P-channel MOSFET is produced using Fairchild
Semiconductor’.
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