Datasheet Details
| Part number | FDS8935 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 209.36 KB |
| Description | MOSFET |
| Datasheet | FDS8935-FairchildSemiconductor.pdf |
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Overview: FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.
| Part number | FDS8935 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 209.36 KB |
| Description | MOSFET |
| Datasheet | FDS8935-FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on) This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant Applications Load Switch Synchronous Rectifier D2 D1 D1 D2 Pin 1 G2 S2 G1 S1 D2 55 D2 66 D1 77 D1 88 Q2 Q1 44 G2 33 S2 22 G1 11 S1 SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Ener
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDS8935 | Dual P-Channel MOSFET | ON Semiconductor |
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