FDS8935 Description
This P-channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness. 1 October-2017, Rev.3 Publication Order Number:.
FDS8935 Key Features
- Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
- Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A
- This P-channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- RoHS pliant