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FDS8935 - Dual P-Channel MOSFET

General Description

This P-channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.

High performance trench technology for extremely low rDS(on) High power and current handling capability

Key Features

  • Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A.
  • Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A General.

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Datasheet Details

Part number FDS8935
Manufacturer onsemi
File Size 271.60 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet FDS8935 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ Features „ Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A „ Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A General Description „ This P-channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.