Datasheet Summary
FDS8935 Dual P-Channel PowerTrench® MOSFET
Dual P-Channel PowerTrench® MOSFET
-80 V, -2.1 A, 183 mΩ
November 2010
Features
General Description
- Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
- Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A
- High performance trench technology for extremely low rDS(on)
- This P-channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- RoHS pliant
Applications
- Load Switch
- Synchronous Rectifier
D2 D1 D1
D2
Pin 1
G2 S2...
