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FDS8935 - MOSFET

General Description

Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on) This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process th

Key Features

  • General.

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FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ November 2010 Features General Description „ Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A „ Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A „ High performance trench technology for extremely low rDS(on) „ This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.