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Fairchild Semiconductor Electronic Components Datasheet

FDS9431A_F085 Datasheet

P-Channel 2.5V Specified MOSFET

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FDS9431A_F085
P-Channel 2.5V Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process has been
especially tailored to minimize on-state resistance and
yet maintain superior switching performance.
Applications
DC/DC converter
Power management
Load switch
Battery protection
February 2010
tm
Features
-3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 V
RDS(ON) = 0.180 @ VGS = -2.5 V.
Fast switching speed.
High density cell design for extremely low RDS(ON).
High power and current handling capability.
Qualified to AEC Q101
RoHS Compliant
D
D
D
D
5
6
SO-8
G
SS
S
7
8
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RqJA
Thermal Resistance, Junction-to-Ambient
RqJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS9431A
FDS9431A_F085
13’’
©2010 Fairchild Semiconductor Corporation
FDS9431A_F085 Rev. A
1
4
3
2
1
Ratings
-20
±8
-3.5
-18
2.5
1.2
1.0
-55 to +150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDS9431A_F085 Datasheet

P-Channel 2.5V Specified MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
DBVDSS
DTJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
DVGS(th)
DTJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
gFS
On-State Drain Current
Forward Transconductance
VGS = 0 V, ID = -250 mA
ID = -250 mA,Referenced to 25°C
-20
VDS = -16 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS = 0 V
V
-28 mV/°C
-1 mA
100 nA
-100 nA
VDS = VGS, ID = -250 mA
-0.4
ID = -250 mA,Referenced to 25°C
-0.6
2
-1 V
mV/°C
VGS = -4.5 V, ID = -3.5 A
VGS = -2.5 V, ID = -3.0 A
VGS = -4.5 V, ID = -3.5 A
TJ=125°C
VGS = -4.5 V, VDS =-5 V
VDS = -5 V, ID = -3.5 A
0.110 0.130
0.140 0.180
0.155 0.220
-10
6.5
W
W
W
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
405 pF
170 pF
45 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = -5 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6 W
VDS = -5 V, ID = -3.5 A,
VGS = -4.5 V
6.5 13
20 35
31 50
21 35
6 8.5
0.8
1.3
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = -2.1 A (Note 2)
-2.1
-0.7 -1.2
A
V
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50° C/W when
mounted on a 1 in2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in2
pad of 2 oz. copper.
c) 125° C/W on a minimum
mounting pad.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDS9431A_F085 Rev. A
2
www.fairchildsemi.com


Part Number FDS9431A_F085
Description P-Channel 2.5V Specified MOSFET
Maker Fairchild Semiconductor
Total Page 5 Pages
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