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FDS9933BZ Datasheet - Fairchild Semiconductor

Dual P-Channel 2.5V Specified PowerTrench MOSFET

FDS9933BZ General Description

* Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A * Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A * Low gate charge (11nC typical). * High performance trench technology for extremely low rDS(on). * HBM ESD protection level >3kV (Note 3). * RoHS Complian.

FDS9933BZ Datasheet (265.18 KB)

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Datasheet Details

Part number:

FDS9933BZ

Manufacturer:

Fairchild Semiconductor

File Size:

265.18 KB

Description:

Dual p-channel 2.5v specified powertrench mosfet.
FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET March 2008 FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET tm -20V, -4.9A,.

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FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor

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