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FDS9933BZ - Dual P-Channel 2.5V Specified PowerTrench MOSFET

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FDS9933BZ Product details

Description

Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A Low gate charge (11nC typical). High performance trench technology for extremely low rDS(on). HBM ESD protection level >3kV (Note 3). RoHS Compliant These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maint

Features

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