FDS9933A Description
These P−Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
FDS9933A Key Features
- 3.8 A, -20 V. RDS(on) = 0.075 W, VGS = -4.5 V
- Low Gate Charge (7 nC Typical )
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- This Device is Pb-Free and Halide Free