Description
These P
Channel 2.5 V specified MOSFETs are produced using
onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on
state resistance and yet maintain low gate charge for superior switching performance.
Features
- 3.8 A,.
- 20 V. RDS(on) = 0.075 W, VGS =.
- 4.5 V
RDS(on) = 0.105 W, VGS =.
- 2.5 V.
- Low Gate Charge (7 nC Typical ).
- Fast Switching Speed.
- High Performance Trench Technology for Extremely Low RDS(on).
- High Power and Current Handling Capability.
- This Device is Pb.
- Free and Halide Free.
FDS9933A Datasheet
