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FDS9933A - Dual P-Channel MOSFET

General Description

These P Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • 3.8 A,.
  • 20 V. RDS(on) = 0.075 W, VGS =.
  • 4.5 V RDS(on) = 0.105 W, VGS =.
  • 2.5 V.
  • Low Gate Charge (7 nC Typical ).
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • This Device is Pb.
  • Free and Halide Free.

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Datasheet Details

Part number FDS9933A
Manufacturer onsemi
File Size 274.60 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet FDS9933A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Dual, P-Channel, POWERTRENCH) 2.5 V Specified FDS9933A General Description These P−Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. Features  −3.8 A, −20 V. RDS(on) = 0.075 W, VGS = −4.5 V RDS(on) = 0.105 W, VGS = −2.