Datasheet Summary
January 2004
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V
- 12V).
Features
- - 5 A,
- 20 V, RDS(ON) = 55 mΩ @ VGS =
- 4.5 V RDS(ON) = 90 mΩ @ VGS =
- 2.5 V
- Extended VGSS range (±12V) for battery applications
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Applications
- -
- - Load switch Motor drive DC/DC conversion Power management
D2 D
D2 D
DD1 D1 D
5 6...
