Datasheet4U Logo Datasheet4U.com

FDS9933BZ - Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description

Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A

Low gate charge (11nC typical).

High performance trench technology for extremely low rDS(on).

HBM ESD protection level >3kV (Note 3).

RoHS Complian

Key Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS9933A Dual P-Channel MOSFET onsemi
FDS9926A Dual N-Channel MOSFET ON Semiconductor
FDS9945-NL Dual N-Channel MOSFET VBsemi
FDS9400A P-Channel 30V MOSFET VBsemi
FDS9400A-NL P-Channel 30V MOSFET VBsemi

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDS9933 Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDS9933A Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDS9934C MOSFET
FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor
FDS9926A Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET March 2008 FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET tm -20V, -4.9A, 46mΩ Features General Description „ Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A „ Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A „ Low gate charge (11nC typical). „ High performance trench technology for extremely low rDS(on). „ HBM ESD protection level >3kV (Note 3). „ RoHS Compliant These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.