FDS9933BZ Datasheet | Fairchild Semiconductor

FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET March 2008 Dual P-Channel 2.5V Specified PowerTrench® MOSFET tm -20V, -4.9A, 46mΩ Features General Description - Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A - Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A - Low gate charge (11nC typical). - High performance trench technology for extremely low rDS(on). - HBM ESD protection level >3kV (Note 3). - RoHS pliant These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These...