Datasheet Summary
November 1998
Dual P-Channel 2.5V Specified PowerTrench™ MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- -3.8 A, -20 V. RDS(on) = 0.075 Ω
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Low gate charge ( 7nC typical ). Fast switching speed. High performance trench technology for extremely low RDS(on). High power and current handling capability. @ VGS = -4.5 V RDS(on) = 0.105 Ω @ VGS = -2.5 V.
Applications
- Load switch
- DC/DC converter
- Motor drives
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D2 D1 D1 G2...
