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FDT1600N10ALZ Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDT1600N10ALZ — N-Channel PowerTrench® MOSFET FDT1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 5.

General Description

This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance.

Application • Consumer Appliances • LED TV and Monitor • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter D D SOT-223 S D G GDS MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.

Symbol VDSS VGSS ID IDM EAS dv/dt Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulse Avalanche Energy Peak D

Key Features

  • RDS(on) = 121 mΩ (Typ. ) @ VGS = 10 V, ID = 2.8 A.
  • RDS(on) = 156 mΩ (Typ. ) @ VGS = 5 V, ID = 1.8 A.
  • Low Gate Charge (Typ. 2.9 nC).
  • Low Crss (Typ. 2.04 pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant.

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