* RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A
* RDS(on) = 156 mΩ (Typ.) @ VGS = 5 V, ID = 1.8 A
* Low Gate Charge (Typ. 2.9 nC)
* Low Crss (Typ. 2.04.

This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance. Application
* Consumer Appliances
* LED TV .

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