Datasheet Summary
FDT3N40 N-Channel UniFETTM MOSFET
N-Channel UniFETTM MOSFET
400 V, 2.0 A, 3.4 Features
- RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A
- Low Gate Charge (Typ. 4.5 nC)
- Low Crss (Typ. 3.7 pF)
- 100% Avalanche Tested
Applications
- LCD/LED TV
- Lighting
- Uninterruptible Power Supply
April 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel...