Datasheet4U Logo Datasheet4U.com

FDT86246L - N-Channel PowerTrench MOSFET

Description

Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switchin

Features

  • General.

📥 Download Datasheet

Datasheet preview – FDT86246L

📁 Similar Datasheet

  • FDT86246L - N-Channel MOSFET (ON Semiconductor)
  • FDT86246 - N-Channel MOSFET (ON Semiconductor)
  • FDT86244 - N-Channel MOSFET (ON Semiconductor)
  • FDT86244 - N-Channel Enhancement MOSFET (Kexin)
  • FDT86102LZ - N-Channel MOSFET (ON Semiconductor)
  • FDT86106LZ - N-Channel MOSFET (ON Semiconductor)
  • FDT86113LZ - N-Channel MOSFET (ON Semiconductor)
  • FDT1600N10ALZ - N-Channel MOSFET (ON Semiconductor)
  • FDT3612 - N-Channel MOSFET (ON Semiconductor)
  • FDT434P - P-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDT86246L N-Channel PowerTrench® MOSFET February 2016 FDT86246L N-Channel PowerTrench® MOSFET 150 V, 2 A, 228 mΩ Features General Description „ Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A „ Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
Published: |