Datasheet Details
| Part number | FDT86246L |
|---|---|
| Manufacturer | onsemi |
| File Size | 259.53 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDT86246L Datasheet
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General Description
This N
POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.
Key Features
- Max rDS(on) = 228 mW at VGS = 10 V, ID = 2 A.
- Max rDS(on) = 280 mW at VGS = 4.5 V, ID = 1.8 A.
- High Performance Trench Technology for Extremely Low rDS(on).
- High Power and Current Handling Capability in a widely used Surface Mount Package.
- Fast Switching Speed.
- 100% UIL Tested.
- These Devices are Pb.
- Free and are RoHS Compliant.