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FDT86246L - N-Channel PowerTrench MOSFET

General Description

Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switchin

Key Features

  • General.

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FDT86246L N-Channel PowerTrench® MOSFET February 2016 FDT86246L N-Channel PowerTrench® MOSFET 150 V, 2 A, 228 mΩ Features General Description „ Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A „ Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.