FDT86246 Overview
Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized...
FDT86246 Key Features
- Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A
- Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used
- Fast switching speed
- 100% UIL Tested
- RoHS pliant
