FDT86244 Datasheet | Fairchild Semiconductor

FDT86244 N-Channel Shielded Gate Power Trench® MOSFET January 2016 N-Channel Shielded Gate Power Trench® MOSFET 150 V, 2.8 A, 128 mΩ Features General Description - Shielded Gate MOSFET Technology - Max r DS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A - Max r DS(on) = 178 mΩ at VGS = 6 V, ID = 2.4 A - High Performance Trench Technology for Extremely Low r DS(on) - High Power and Current Handling Capability in a Widely Used Surface Mount Package - Fast Switching Speed - 100% UIL Tested - Ro HS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for r DS(on), switching performance and ruggedness. Applications - Load Switch - Primary Switch SOT-223 D GDS MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current...