FDT86244 Datasheet and Specifications PDF

The FDT86244 is a N-Channel MOSFET.

Key Specifications

PackageSOT-223
Mount TypeSurface Mount
Pins4
Height1.8 mm
Length3.7 mm
Width6.7 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
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Part NumberFDT86244 Datasheet
Manufactureronsemi
Overview This N−Channel MOSFET is produced using Fairchild onsemi advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for RDS(on), switching performance an.
* Shielded Gate MOSFET Technology
* Max RDS(on) = 128 mW at VGS = 10 V, ID = 2.8 A
* Max RDS(on) = 178 mW at VGS = 6 V, ID = 2.4 A
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability in a Widely Used Surface Mount Package
* Fast Switching Speed.
Part NumberFDT86244 Datasheet
DescriptionMOSFET
ManufacturerFairchild Semiconductor
Overview „ Shielded Gate MOSFET Technology „ Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A „ Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.4 A „ High Performance Trench Technology for Extremely Low rDS(on) „ Hig. General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A
* Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.4 A
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability in a Widely Used Surface Mount Package .
Part NumberFDT86244 Datasheet
DescriptionN-Channel Enhancement MOSFET
ManufacturerKexin Semiconductor
Overview SMD Type N-Channel Enhancement MOSFET FDT86244 MOSFET ■ Features ● VDS (V) = 150V ● ID = 2.8 A (VGS = 10V) ● RDS(ON) ＜ 285mΩ (VGS = 10V) ● RDS(ON) ＜ 305mΩ (VGS = 6V) D GDS SOT-223 6.50±0.2 3.00.
* VDS (V) = 150V
* ID = 2.8 A (VGS = 10V)
* RDS(ON) ＜ 285mΩ (VGS = 10V)
* RDS(ON) ＜ 305mΩ (VGS = 6V) D GDS SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 123 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain
* Absolute Maxim.

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