FDT86244 - N-Channel MOSFET

Product Overview

ON Semiconductor

Part number	FDT86244
Manufacturer	ON Semiconductor
File Size	244.67 KB
Description	N-Channel MOSFET
Datasheet	FDT86244 Datasheet
Additional preview pages of the FDT86244 datasheet.

This N

advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for RDS(on), switching performance and ruggedness.

Shielded Gate MOSFET Technology.
Max RDS(on) = 128 mW at VGS = 10 V, ID = 2.8 A.
Max RDS(on) = 178 mW at VGS = 6 V, ID = 2.4 A.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
These Devices are Pb.
Free and are RoHS Compliant Typical.

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Published: Dec 25, 2023 |