Datasheet Details
| Part number | FDT86244 |
|---|---|
| Manufacturer | onsemi |
| File Size | 244.67 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDT86244 Datasheet
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General Description
This N
advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for RDS(on), switching performance and ruggedness.
Key Features
- Shielded Gate MOSFET Technology.
- Max RDS(on) = 128 mW at VGS = 10 V, ID = 2.8 A.
- Max RDS(on) = 178 mW at VGS = 6 V, ID = 2.4 A.
- High Performance Trench Technology for Extremely Low RDS(on).
- High Power and Current Handling Capability in a Widely Used Surface Mount Package.
- Fast Switching Speed.
- 100% UIL Tested.
- These Devices are Pb.
- Free and are RoHS Compliant Typical.