FDT86244 Datasheet | onsemi

MOSFET - N-Channel Shielded Gate POWERTRENCH) 150 V, 2.8 A, 128 m W Description This N- Channel MOSFET is produced using Fairchild onsemi advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for RDS(on), switching performance and ruggedness. Features - Shielded Gate MOSFET Technology - Max RDS(on) = 128 m W at VGS = 10 V, ID = 2.8 A - Max RDS(on) = 178 m W at VGS = 6 V, ID = 2.4 A - High Performance Trench Technology for Extremely Low RDS(on) - High Power and Current Handling Capability in a Widely Used Surface Mount Package - Fast Switching Speed - 100% UIL Tested - These Devices are Pb- Free and are Ro HS pliant Typical Applications - Load Switch - Primary Switch MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current - Continuous TA = 25°C (Note 1a) - Pulsed EAS Single Pulse Avalanche Energy (Note 3) PD Power Dissipation TA = 25°C (Note 1a) Power Dissipation TA = 25°C (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range 12 m J - 55 to +150...