FDT86244 Description
This N−Channel MOSFET is produced using Fairchild onsemi advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for RDS(on), switching performance and ruggedness.
FDT86244 Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 128 mW at VGS = 10 V, ID = 2.8 A
- Max RDS(on) = 178 mW at VGS = 6 V, ID = 2.4 A
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability in a Widely Used
- Fast Switching Speed
- 100% UIL Tested
- These Devices are Pb-Free and are RoHS pliant