The FDT86246 is a N-Channel MOSFET.
| Package | SOT-223-4 |
|---|---|
| Mount Type | Surface Mount |
| Height | 1.8 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDT86246 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel MOSFET is produced using Fairchild onsemi
advanced PowerTrench® Process that has been optimized for RDS(on), switching performance and ruggedness.
Features
• Max RDS(on) = 236 mW at VGS.
* Max RDS(on) = 236 mW at VGS = 10 V, ID = 2 A * Max RDS(on) = 329 mW at VGS = 6 V, ID = 1.7 A * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current Handling Capability in a Widely Used Surface Mount Package * Fast Switching Speed * 100% UIL Tested * These Devices a. |
| Part Number | FDT86246 Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A High performance trench technology for extremely low rDS(on) High power and current handling capabil.
General Description
* Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A * Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A * High performance trench technology for extremely low rDS(on) * High power and current handling capability in a widely used surface mount package * Fast switching speed * 100% UIL Te. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Newark | 4007 | 1+ : 0.912 USD 10+ : 0.658 USD 25+ : 0.595 USD 50+ : 0.531 USD |
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| Newark | 0 | 4000+ : 0.496 USD 8000+ : 0.483 USD 16000+ : 0.478 USD |
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| Verical | 354 | 16+ : 0.376 USD 25+ : 0.3722 USD 100+ : 0.3685 USD 250+ : 0.3679 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| FDT86246L | onsemi | N-Channel MOSFET |
| FDT86246L | Fairchild Semiconductor | N-Channel PowerTrench MOSFET |