FDU5N53 datasheet, mosfet equivalent, Fairchild Semiconductor

datasheet Download (Size : 282.80KB)

FDU5N53 Features and benefits

* RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A
* Low gate charge ( Typ. 11nC)
* Low Crss ( Typ. 5pF)
* Fast switching
* 100% avalanche tested
* Imp.

FDU5N53 Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

Image gallery