Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features
- faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features.
- 7.7 A, 80 V. RDS(ON) = 29 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 6 V.
- Low gate charge (34nC typical).
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability
D
D G
S DT(O-TP(-TOD2AO5--KP2-2A5K2).
FDU3580 Datasheet
