FDU6N25 Key Features
- RDS(on) = 0.9 Ω (Typ.) @ VGS = 10 V, ID = 2.2 A
- Low Gate Charge (Typ. 4.5 nC)
- Low Crss (Typ. 5 pF)
- 100% Avalanche Tested
- Part: FDU6N25
- Manufacturer: Fairchild (official site)
- Size: 433.57 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FDU6N20 | MOSFET |
| FDU6N50 | N-Channel MOSFET |
| FDU6030BL | 30V N-Channel PowerTrench MOSFET |
| FDU6296 | 30V N-Channel MOSFET |
| FDU6512A | 20V N-Channel MOSFET |
FDU6N25 Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic...