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FDU6N20 - MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A.
  • Low gate charge ( Typ. 4.7nC ).
  • Low Crss ( Typ. 6.3pF ).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant May 2007 UniFETTM tm.

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Full PDF Text Transcription for FDU6N20 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDU6N20. For precise diagrams, and layout, please refer to the original PDF.

FDD6N20 / FDU6N20 N-Channel MOSFET FDD6N20 / FDU6N20 N-Channel MOSFET 200V, 4.5A, 0.8Ω Features • RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A • Low gate charge ( Typ. 4...

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S(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A • Low gate charge ( Typ. 4.7nC ) • Low Crss ( Typ. 6.3pF ) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant May 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power s

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