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FDU7N20 - MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Overview

FDD7N20 / FDU7N20 200V N-Channel MOSFET FDD7N20 / FDU7N20 N-Channel MOSFET 200V, 5A, 0.

Key Features

  • RDS(on) = 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A.
  • Low gate charge( Typ. 5nC ).
  • Low Crss ( Typ. 5pF ).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant April 2007 UniFETTM tm.