Datasheet Summary
FDD7N60NZ / FDU7N60NZTU
- N-Channel UniFETTM II MOSFET
November 2013
FDD7N60NZ / FDU7N60NZTU
N-Channel UniFETTM II MOSFET
600 V, 5.5 A, 1.25 Ω Features
- RDS(on) = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 2.75 A
- Low Gate Charge (Typ. 13 nC)
- Low Crss (Typ. 7 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- ESD Improved Capability
- RoHS pliant
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal...