n-channel mosfet.
General Description
* Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A
* Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A
* Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V <.
* Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A
* Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A
* Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V
* Low gate resistance
* 100% Avalanche tested
* RoHS compliant
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This N-Channel MOSFET.
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