Datasheet4U Logo Datasheet4U.com

FDU8770 - N-Channel MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Features

  • Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 35A.
  • Max rDS(on) = 5.5mΩ at VGS = 4.5V, ID = 35A.
  • Low gate charge: Qg(10) = 52nC(Typ), VGS = 10V.
  • Low gate resistance.
  • RoHS Compliant AD FREE I LE.
  • Vcore DC-DC for Desktop Computers and Servers.
  • VRM for Intermediate Bus Architecture D G D G DS I-PAK S G (TO-251AA) Short Lead I-PAK MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDU8896 N-Channel Power MOSFET ON Semiconductor
FDU-2-12R000 (FDU-2-xRxxx) Frequency Doubling Unit Data Delay Devices
FDU-2-16R000 (FDU-2-xRxxx) Frequency Doubling Unit Data Delay Devices
FDU-2-1R000 (FDU-2-xRxxx) Frequency Doubling Unit Data Delay Devices
FDU-2-2R000 (FDU-2-xRxxx) Frequency Doubling Unit Data Delay Devices

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDU8778 N-Channel MOSFET
FDU8780 N-Channel MOSFET
FDU8782 N-Channel MOSFET
FDU8796 N-Channel MOSFET
FDU8580 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDD8770/FDU8770 N-Channel PowerTrench® MOSFET MPLEMENTATION March 2015 FDD8770/FDU8770 N-Channel PowerTrench® MOSFET 25V, 35A, 4.0mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application Features „ Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 5.5mΩ at VGS = 4.
Published: |