FDU8782
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed.
Application
- Vcore DC-DC for Desktop puters and Servers
- VRM for Intermediate Bus Architecture
Features
- Max r DS(on) = 11.0mΩ at VGS = 10V, ID = 35A
- Max r DS(on) = 14.0mΩ at VGS = 4.5V, ID = 35A
- Low gate charge: Qg(10) = 18n C(Typ), VGS = 10V
- Low gate resistance
- Avalanche rated and 100% tested
- Ro HS pliant
G DS
I-PAK
(TO-251AA)
Short Lead I-PAK
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
-Continuous (Die Limited)
-Pulsed
EAS PD TJ, TSTG
Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature
Thermal Characteristics
(Note 1)...
