Datasheet4U Logo Datasheet4U.com

FDW2516NZ - N-Channel MOSFET

Description

This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS(ON) @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package.

Features

  • 5.8 A, 20 V RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V.
  • Isolated source and drain pins.
  • ESD protection diode (note 3).
  • High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V.
  • Low profile TSSOP-8 package.

📥 Download Datasheet

Datasheet preview – FDW2516NZ

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor
  • FDW2510NZ - Dual N-Channel MOSFET
  • FDW2511NZ - Dual N-Channel MOSFET
  • FDW2512NZ - Dual N-Channel MOSFET
  • FDW2515N - Common Drain N-Channel 2.5V specified PowerTrench MOSFET
  • FDW2515NZ - Common Drain N-Channel 2.5V specified PowerTrench MOSFET
  • FDW2501N - Dual N-Channel 2.5V Specified PowerTrench MOSFET
  • FDW2501NZ - Dual N-Channel 2.5V Specified PowerTrench MOSFET
  • FDW2502P - Dual P-Channel 2.5V Specified PowerTrench MOSFET

Full PDF Text Transcription

Click to expand full text
FDW2516NZ March 2003 FDW2516NZ Common Drain N-Channel 2.5V specified PowerTrench® MOSFET General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS(ON) @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package. Features • 5.8 A, 20 V RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V • Isolated source and drain pins • ESD protection diode (note 3) • High performance trench technology for extremely low RDS(ON) @ VGS = 2.
Published: |