FDW2515N Datasheet | Fairchild Semiconductor

FDW2515NZ February 2003 FDW2515NZ mon Drain N-Channel 2.5V specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Features - 5.8 A, 20 V RDS(ON) = 28 mΩ @ VGS = 4.5 V RDS(ON) = 38 mΩ @ VGS = 2.5 V - Extended VGSS range (±12V) for battery applications - ESD protection diode (note 3) - High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V - Low profile TSSOP-8 package Applications - Li-Ion Battery Pack G2 S2 S2 D2 G1 S1 S1 D1 Pin...