FDW2516NZ Datasheet | Fairchild Semiconductor

March 2003 FDW2516NZ mon Drain N-Channel 2.5V specified PowerTrench® MOSFET General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS(ON) @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package. Features - 5.8 A, 20 V RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V - Isolated source and drain pins - ESD protection diode (note 3) - High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V - Low profile TSSOP-8 package Applications - Li-Ion Battery Pack D D D D G2 S2 G1 S1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum...