FDY4000CZ Datasheet, Fairchild Semiconductor

Q1: N-Channel
* Max rDS(on) = 0.7Ω at VGS = 4.5V, ID = 600mA
* Max rDS(on) = 0.85Ω at VGS = 2.5V, ID = 500mA
* Max rDS(on) = 1.25Ω at VGS = 1.8V, ID =150 mA Q.

* Max rDS(on) = 1.2Ω at VGS = -4.5V, ID = -350mA
* Max rDS(on) = 1.6Ω at VGS = -2.5V, ID = -300mA
* Max rDS.

This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS= 2.5V and specify the rDS(ON) @ VGS = 1.8V. Applications
* Max rDS(on) = 1.2Ω at VGS = -4.5V,.