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FDY4000CZ - Complementary N & P-Channel PowerTrench MOSFET

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FDY4000CZ Product details

Description

This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS= 2.5V and specify the rDS(ON) @ VGS = 1.8V. Max rDS(on) = 1.2Ω at VGS = -4.5V, ID = -350mA Max rDS(on) = 1.6Ω at VGS = -2.5V, ID = -300mA Max rDS(on) = 2.7Ω at VGS = -1.8V, ID = -150mA ESD protection diode (note 3) RoHS Compliant 6 5 4 www.DataSheet4U.com S2 4 3 D2 G2 5 2 G1

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