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FDY4000CZ Key Features

  • Max rDS(on) = 0.7Ω at VGS = 4.5V, ID = 600mA
  • Max rDS(on) = 0.85Ω at VGS = 2.5V, ID = 500mA
  • Max rDS(on) = 1.25Ω at VGS = 1.8V, ID =150 mA Q2: P-Channel
  • Level shifting
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers

Other FDY4000CZ Datasheets

Manufacturer Part Number Description
VBsemi Logo VBsemi FDY4000CZ N- & P-Channel 20V MOSFET

View all FDY4000CZ datasheets →

FDY4000CZ Description

This plementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS= 2.5V and specify the rDS(ON) @ VGS = 1.8V.