VBsemi Electronics FDY4000CZ
N- & P-Channel 20V MOSFET
| Part No. | FDY4000CZ |
|---|---|
| Datasheet | FDY4000CZ Download |
| Manufacturer | VBsemi Electronics |
| Description | N- & P-Channel 20V MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Trench Power MOSFET
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC SC-75-6 D1 S2 G2 G1 Top View S1 N-Channel MOSFET D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID 0.6 - 0.3 0.55 - 0.25 Pulsed Drain Current IDM 3 -2 Continuous Source Current (Diode Conduction)a, b IS 1.05 - 1.05 Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD 1.15 0.73 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t ≤5 s Steady State Maximum Junction-to-Lead Steady State Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s. Symbol RthJA RthJL Typical 93 130 75 Maximum 110 150 90 Unit V A W °C Unit °C/W MMJSRRJUTUU 1 FDY4000CZ-VB SPECIFICATIONS TJ = 2...
