Datasheet4U Logo Datasheet4U.com

FDY4000CZ - N- & P-Channel 20V MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Trench Power MOSFET.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC SC-75-6 D1 S2 G2 G1 Top View S1 N-Channel MOSFET D2 P-Channel MOSFET.

📥 Download Datasheet

Datasheet Details

Part number FDY4000CZ
Manufacturer VBsemi
File Size 331.56 KB
Description N- & P-Channel 20V MOSFET
Datasheet download datasheet FDY4000CZ Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDY4000CZ Complementary N & P-Channel PowerTrench MOSFET Fairchild Semiconductor
FDY4001CZ Complementary N & P-Channel PowerTrench MOSFET Fairchild Semiconductor
FDY1002PZ MOSFET Fairchild Semiconductor
FDY1002PZ Dual P-Channel MOSFET ON Semiconductor
FDY100PZ Single P-Channel Specified PowerTrench MOSFET Fairchild Semiconductor

Other Datasheets by VBsemi

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDY4000CZ-VB FDY4000CZ-VB Datasheet N-and P-Channel 20V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY N-Channel VDS (V) 20 RDS(on) (Ω) 0.270 at VGS = 4.5 V 0.410 at VGS = 2.5 V P-Channel - 20 0.660 at VGS = - 4.5 V 0.840 at VGS = - 2.5 V ID (A) 0.60 0.55 - 0.30 - 0.25 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Trench Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC SC-75-6 D1 S2 G2 G1 Top View S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID 0.6 - 0.3 0.55 - 0.