Description
This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS= 2.5V and specify the rDS(ON) @ VGS = 1.8V.
Max rDS(on) = 1.2Ω at VGS = -4.5V, ID = -350mA
Max rDS(on) = 1.6Ω at VGS = -2.5V, ID = -300mA
Max rDS(on) = 2.7Ω at VGS = -1.8V, ID = -150mA
ESD protection diode (note 3)
RoHS Compliant
6 5 4
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S2 4
3
D2
G2 5
2
G1
Features
- Q1: N-Channel.
- Max rDS(on) = 0.7Ω at VGS = 4.5V, ID = 600mA.
- Max rDS(on) = 0.85Ω at VGS = 2.5V, ID = 500mA.
- Max rDS(on) = 1.25Ω at VGS = 1.8V, ID =150 mA Q2: P-Channel.
- Level shifting.
- Power Supply Converter Circuits.
- Load/Power Switching Cell Phones, Pagers
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General.
FDY4000CZ Datasheet
