FDY4000CZ Description
This plementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS= 2.5V and specify the rDS(ON) @ VGS = 1.8V.
FDY4000CZ Key Features
- Max rDS(on) = 0.7Ω at VGS = 4.5V, ID = 600mA
- Max rDS(on) = 0.85Ω at VGS = 2.5V, ID = 500mA
- Max rDS(on) = 1.25Ω at VGS = 1.8V, ID =150 mA Q2: P-Channel
- Level shifting
- Power Supply Converter Circuits
- Load/Power Switching Cell Phones, Pagers