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FDY4000CZ - Complementary N & P-Channel PowerTrench MOSFET

General Description

This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS= 2.5V and specify the rDS(ON) @ VGS = 1.8V.

Max rDS(on) = 1.2Ω at VGS = -4.5V, ID = -350mA Max rDS(on) = 1.6Ω at V

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 0.7Ω at VGS = 4.5V, ID = 600mA.
  • Max rDS(on) = 0.85Ω at VGS = 2.5V, ID = 500mA.
  • Max rDS(on) = 1.25Ω at VGS = 1.8V, ID =150 mA Q2: P-Channel.
  • Level shifting.
  • Power Supply Converter Circuits.
  • Load/Power Switching Cell Phones, Pagers tm General.

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FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET August 2006 FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET Features Q1: N-Channel „ Max rDS(on) = 0.7Ω at VGS = 4.5V, ID = 600mA „ Max rDS(on) = 0.85Ω at VGS = 2.5V, ID = 500mA „ Max rDS(on) = 1.25Ω at VGS = 1.8V, ID =150 mA Q2: P-Channel „ Level shifting „ Power Supply Converter Circuits „ Load/Power Switching Cell Phones, Pagers tm General Description This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS= 2.5V and specify the rDS(ON) @ VGS = 1.8V. Applications „ Max rDS(on) = 1.2Ω at VGS = -4.5V, ID = -350mA „ Max rDS(on) = 1.6Ω at VGS = -2.5V, ID = -300mA „ Max rDS(on) = 2.7Ω at VGS = -1.