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Fairchild Semiconductor Electronic Components Datasheet

FFP08S60S Datasheet

Stealth 2 Rectifier

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FFP08S60S pdf
FFP08S60S
Stealth 2 Rectifier
Features
• High Speed Switching ( Max. trr<30ns @ IF=8A )
• High Reverse Voltage and High Reliability
• Avalanche Energy Rated
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
Pin Assignments
April 2007
tm
8A, 600V Stealth2 Rectifier
The FFP08S60S is stealth 2 rectifier with soft recovery charac-
teristics (trr<30ns). They has half the recovery time of hyperfast
rectifier and are silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as freewheeling of boost diode
in switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching
circuits reducing power loss in the switching transistors.
TO-220-2L
1. Cathode 2. Anode
www.DataSheet4U.com
1
1. Cathode
2
2. Anode
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
TJ, TSTG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 115 °C
Operating Junction and Storage Temperature
Thermal Characteristics TC = 25°C unless otherwise noted
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case
Package Marking and Ordering Information
Device Marking Device
F08S60S
FFP08S60STU
Package
TO-220-2L
Reel Size
-
Value
600
600
600
8
80
- 65 to +150
Max
2.5
Tape Width
-
Units
V
V
V
A
A
°C
Units
°C/W
Quantity
50
©2006 Fairchild Semiconductor Corporation
FFP08S60S Rev. A
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FFP08S60S Datasheet

Stealth 2 Rectifier

No Preview Available !

FFP08S60S pdf
Electrical Characteristics TC = 25°C unless otherwise noted
Parameter
VFM1
IRM1
trr
trr
Irr
S factor
Qrr
trr
Irr
S factor
Qrr
WAVL
Conditions
IF = 8A
IF = 8A
VR = 600V
VR = 600V
IF =1A, di/dt = 100A/µs, VR= 30V
IF =8A, di/dt = 200A/µs, VR = 390V
IF =8A, di/dt = 200A/µs, VR= 390V
Avalanche Energy (L = 40mH)
Notes:
1. Pulse : Test Pulse width = 300µs, Duty Cycle = 2%
Test Circuit and Waveforms
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 25 °C
TC = 125 °C
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
20
Typ.
2.1
1.6
-
-
-
19
2.2
0.6
21
58
4.3
1.3
125
-
Max
2.6
-
100
500
25
30
-
-
-
-
-
-
-
-
Units
V
V
µA
µA
ns
ns
A
nC
ns
A
nC
mJ
FFP08S60S Rev. A
2 www.fairchildsemi.com


Part Number FFP08S60S
Description Stealth 2 Rectifier
Maker Fairchild Semiconductor
Total Page 5 Pages
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FFP08S60S pdf
FFP08S60S Datasheet PDF
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