FFP08H60S Datasheet | Fairchild Semiconductor

Features - Hyperfast Recovery trr = 45 ns (@ IF = 8 A) - Max Forward Voltage, VF = 2.6 V (@ TC = 25°C) - 600 V Reverse Voltage and High Reliability - Avalanche Energy Rated - Ro HS pliant Applications - General Purpose - SMPS, Power Switching Circuits - Free-Wheeling Diode for Motor Application Pin Assignments Description The FFP08H60S is a hyperfast II diode and silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling/clamping diodes in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. TO-220-2L 1. Cathode 2. Anode 1 1. Cathode 2 2. Anode Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave @ TC = 105 C Operating Junction and Storage Temperature Ratings 600 600 600 8 60 - 65 to +175 Unit V V V A A C Thermal Characteristics TC = 25°C unless otherwise noted Symbol...