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FFP08S60S - Stealth 2 Diode

Key Features

  • High Speed Switching ( Max. trr.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FFP08S60S Stealth 2 Rectifier April 2007 FFP08S60S Stealth 2 Rectifier Features • High Speed Switching ( Max. trr<30ns @ IF=8A ) • High Reverse Voltage and High Reliability • Avalanche Energy Rated tm 8A, 600V Stealth2 Rectifier The FFP08S60S is stealth 2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.