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Fairchild Semiconductor Electronic Components Datasheet

FFPF08H60S Datasheet

Hyperfast 2 Rectifier

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FFPF08H60S
Hyperfast 2 Rectifier
Features
• High Speed Switching ( trr=45ns(Max.) @ IF=8A )
• High Reverse Voltage and High Reliability
• Avalanche Energy Rated
• Low Forward Voltage( VF=2.1V(Max.) @ IF=8A )
Applications
• General Purpose
• Switching Mode Power Supply
• Free-wheeling diode for motor application
• Power switching circuits
Pin Assignments
April 2007
tm
8A, 600V Hyperfast 2 Rectifier
The FFPF08H60S is hyperfast2 rectifier (trr=45ns(Max.) @
IF=8A). it has half the recovery time of ultrafast rectifier and is
silicon nitride passivated ion-implanted epitaxial planar con-
struction.
This device is intended for use as freewheeling/clamping rectifi-
ers in a variety of switching power supplies and other power
swithching applications. Its low stored charge and hyperfast soft
recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transis-
tors.
TO-220F-2L
1. Cathode 2. Anode
www.DataSheet4U.com
1
1. Cathode
2
2. Anode
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
TJ, TSTG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 105 °C
Operating Junction and Storage Temperature
Thermal Characteristics TC = 25°C unless otherwise noted
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case
Package Marking and Ordering Information
Device Marking Device
F08H60S
FFPF08H60STU
Package
TO-220F
Reel Size
-
Value
600
600
600
8
60
- 65 to +150
Max
3.4
Tape Width
-
Units
V
V
V
A
A
°C
Units
°C/W
Quantity
50
©2006 Fairchild Semiconductor Corporation
FFPF08H60S Rev. A
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FFPF08H60S Datasheet

Hyperfast 2 Rectifier

No Preview Available !

Electrical Characteristics TC = 25°C unless otherwise noted
Parameter
VFM1
IRM1
trr
ta
tb
Qrr
WAVL
Conditions
IF = 8A
IF = 8A
VR = 600V
VR = 600V
IF =1A, di/dt = 100A/µs, VCC = 30V
IF =8A, di/dt = 100A/µs, VCC = 390V
IF =8A, di/dt = 100A/µs, VCC = 390V
Avalanche Energy (L = 40mH)
Notes:
1. Pulse : Test Pulse width = 300µs, Duty Cycle = 2%
Test Circuit and Waveforms
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
Min.
-
-
-
-
-
-
-
-
-
20
Typ.
-
-
-
-
-
-
15
16
18.6
-
Max
2.1
1.7
100
200
35
45
-
-
-
-
Units
V
V
µA
µA
ns
ns
ns
ns
nC
mJ
FFPF08H60S Rev. A
2
www.fairchildsemi.com


Part Number FFPF08H60S
Description Hyperfast 2 Rectifier
Maker Fairchild Semiconductor
Total Page 5 Pages
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