FGA180N33AT - 180A PDP Trench IGBT

Description

Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

Features

High Current Capability.
Low saturation voltage: VCE(sat) =1.03V @ IC = 40A.
High input impedance.
RoHS compliant tm General.

Fairchild Semiconductor

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Datasheet Details

Part number	FGA180N33AT
Manufacturer	Fairchild Semiconductor
File Size	607.35 KB
Description	180A PDP Trench IGBT
Datasheet	FGA180N33AT Datasheet
Additional preview pages of the FGA180N33AT datasheet.

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Full PDF Text Transcription

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FGA180N33AT 330V, 180A PDP Trench IGBT April 2008 FGA180N33AT 330V, 180A PDP Trench IGBT Features • High Current Capability • Low saturation voltage: VCE(sat) =1.03V @ IC = 40A • High input impedance • RoHS compliant tm General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Applications PDP SYSTEM C G TO-3P G CE E Absolute Maximum Ratings Symbol VCES VGES IC IC pulse (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.

Published: Feb 21, 2014 |