FGA180N30D Description
Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential. C G TO-3P G C E E Rating TC = 25oC unless otherwise noted Symbol VCES VGES IC ICM IF IFM PD TJ Tstg TL Notes:.
FGA180N30D Key Features
- High Current Capability
- Low saturation voltage: VCE(sat), Typ = 1.1 V@ IC = 40A
- High Input Impedance