FGA180N33AT - 180A PDP Trench IGBT

Fairchild (now onsemi)

General Description

Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

Key Features

High Current Capability.
Low saturation voltage: VCE(sat) =1.03V @ IC = 40A.
High input impedance.
RoHS compliant tm General.

📥 Download Datasheet

FGA180N33AT 180a pdp trench igbt by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FGA180N33AT
Manufacturer	Fairchild (now onsemi)
File Size	607.35 KB
Description	180A PDP Trench IGBT
Datasheet	FGA180N33AT Datasheet

Other Datasheets by Fairchild (now onsemi)

Part Number	Description
FGA180N33ATD	330 V PDP Trench IGBT
FGA180N30D	300V PDP IGBT
FGA120N30D	300V PDP IGBT
FGA15N120AN	NPT Igbt
FGA15N120AND	IGBT
FGA15N120ANTD	1200V NPT Trench IGBT
FGA15N120ANTDTU	IGBT
FGA15N120FTD	15A Field Stop Trench IGBT
FGA15S125P	IGBT
FGA20N120FTD	20A Trench IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

FGA180N33AT 330V, 180A PDP Trench IGBT April 2008 FGA180N33AT 330V, 180A PDP Trench IGBT Features • High Current Capability • Low saturation voltage: VCE(sat) =1.03V @ IC = 40A • High input impedance • RoHS compliant tm General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Applications PDP SYSTEM C G TO-3P G CE E Absolute Maximum Ratings Symbol VCES VGES IC IC pulse (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.