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FGA50N100BNT Datasheet, Fairchild Semiconductor

FGA50N100BNT co-pak equivalent, 50a npt-trench igbt co-pak.

FGA50N100BNT Avg. rating / M : 1.0 rating-11

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FGA50N100BNT Datasheet

Features and benefits


* High Speed Switching
* Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A
* High Input Impedance
* RoHS Compliant Applications
* UPS, PFC, I-H Jar.

Application


* UPS, PFC, I-H Jar, Induction Heater, Home Appliance. General Description Trench insulated gate bipolar transistor.

Description

Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for UPS, PFC, I-H Jar, induction He.

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FGA50N100BNT Page 1 FGA50N100BNT Page 2 FGA50N100BNT Page 3

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