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Fairchild Semiconductor Electronic Components Datasheet

FGH30S150P Datasheet

IGBT

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March 2016
FGH30S150P
1500 V, 30 A Shorted-anode IGBT
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.85 V @ IC = 30 A
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave Oven
General Description
Using advanced field stop trench and shorted-anode technol-
ogy, Fairchild’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for soft switching
applications. The device can operate in parallel configuration
with exceptional avalanche capability. This device is designed
for induction heating and microwave oven.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM (1)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
IF
Diode Continuous Forward Current
@ TC = 25oC
IF
Diode Continuous Forward Current
@ TC = 100oC
PD
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
Notes:
1: Limited by Tjmax
C
G
E
Ratings
1500
±25
60
30
90
60
30
500
250
-55 to +175
-55 to +175
300
Typ.
--
--
Max.
0.3
40
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
©2015 Fairchild Semiconductor Corporation
FGH30S150P Rev. 1.1
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FGH30S150P Datasheet

IGBT

No Preview Available !

Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FGH30S150P
FGH30S150P
TO-247
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 1 mA
Collector Cut-Off Current
G-E Leakage Current
VCE = 1500, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
VFM Diode Forward Voltage
IC = 30mA, VCE = VGE
IC = 30A, VGE = 15V
TC = 25oC
IC = 30A, VGE = 15V,
TC = 125oC
IC = 30A, VGE = 15V,
TC = 175oC
IF = 30A, TC = 25oC
IF = 30A, TC = 175oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characcteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 600V, IC = 30A,
RG = 10, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 600V, IC = 30A,
RG = 10, VGE = 15V,
Resistive Load, TC = 175oC
VCE = 600V, IC = 30A,
VGE = 15V
1500
-
-
V
- 1.5 - V/oC
- - 1 mA
-
-
±500
nA
4.5 6.0 7.5
- 1.85 2.4
- 2.06 -
- 2.15 -
- 1.61 2.2
- 1.96 -
V
V
V
V
V
V
- 3310 -
- 70 -
- 55 -
pF
pF
pF
- 32 -
- 292 -
- 492 -
- 214 -
- 1.16 -
- 0.9 -
- 2.06 -
- 36 -
- 336 -
- 560 -
- 520 -
- 1.39 -
- 1.86 -
- 3.25 -
- 369 -
- 23.5 -
- 199 -
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
©2015 Fairchild Semiconductor Corporation
FGH30S150P Rev. 1.1
2
www.fairchildsemi.com


Part Number FGH30S150P
Description IGBT
Maker Fairchild Semiconductor
Total Page 8 Pages
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