FGL60N170D datasheet, igbt equivalent, Fairchild Semiconductor

datasheet Download (Size : 558.96KB)

Features and benefits

*
*
*
* High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode Application Home Appl.

Application

Features
*
*
*
* High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A High Input .

Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. FGL60N170D is designed for the Induction Heating applications. Features
*
*
*
* High Speed Switching Low Saturation Voltage : VCE(sat).

Image gallery