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FGPF45N45T Datasheet PDP Trench IGBT

Manufacturer: Fairchild (now onsemi)

Overview: FGPF45N45T 450V, 45A PDP Trench IGBT December 2007 FGPF45N45T 450V, 45A PDP Trench.

General Description

Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

Applications • PDP System C TO-220F 1 1.Gate 2.Collector 3.Emitter G E Absolute Maximum Ratings Symbol VCES VGES ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.

for soldering Purposes, 1/8” from case for 5 seconds @ TC = @ TC = 25oC 25oC Ratings 450 ±30 180 51.6 20.6 -55 to +150 -55 to +150 300 Units V V A W W oC oC o @ TC = 100oC C Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 * Ic_pluse limited by max Tj Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ.

Key Features

  • High Current Capability.
  • Low saturation voltage: VCE(sat) =1.6V @ IC = 45A.
  • High input impedance.
  • Fast switching.
  • RoHS complaint tm General.

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